Main Research Lines General description My research work along the years have been oriented to solve specific problems in Circuit Simulation, Computer-Aided Design (CAD), Electronic Design Automation (EDA) and Device Modelling.
Lines of Research MEMRISTORS. Research on modelling, simulation and design of memristor, memory-elements and memristive circuits. Circuit Simulation. Still-existing problems in circuit simulation are covered herein, as well as new arising issues with non-traditional electronics, such as single-electron devices. Nanometric MOS modelling. MOS structures and MOS transistors with such small dimensions are prone to suffer effects that were neglected in the past. The generated models at device-level must tackle magnetic and thermal effects in these devices. Single-electron devices. Single-electron devices are expected to co-exist with traditional electronics in a near future. Suitable modelling methodologies for these types of devices are needed. The generated models must allow the simulation of those hybrid circuits. Nonlinear circuit theory. Several mathematical tools and methods have been developed within the group in order to solve the equations emanating from nonlinear circuits. Expected types of projects Projects within the research lines above can be PhD. research projects MSc research projects Bachelor’s degree thesis (Tesis de Licenciatura). Residencias profesionales. Estancias de Servicio Social. Contact Further information can be obtained at jarocho@inaoep.mx or asarmiento@me.com

Dr. Arturo Sarmiento-Reyes, INAOE, Electronics Department.          jarocho@inaoep.mx      asarmiento@me.com