INAOE | Electrónica | Directorio | Investigadores | Edmundo Gutiérrez Domínguez
Asignar puntaje:



Dr. Edmundo Gutiérrez Domínguez

sni nivel 2


Correo Electrónico:

Teléfono: +52 222 266 31 00 ext. 1424

Oficina: 1424



Información curricular:

Doctorado obtenido en: Universidad Católica de Leuven, Bélgica en 1993.
Título de tesis: "Electrical performance of submicron CMOS technologies from 300 K down to 4.2 K"

Maestría en Ciencias obtenida en: Universidad Católica de Leuven, Bélgica en 1989.
Título de Tesis: "D.C. performance of submicron CMOS inverters"

Licenciatura obtenida en: Universidad Autónoma de Puebla, en 1985

Líneas de investigación/RESEARCH ACTIVITIES:

  • Física de materiales y dispositivos semiconductores, incluyendo transistores MOS, sensores magnéticos y térmicos/Semiconductor materials and device physics including nanometric MOSFETs, magnetic and thermal sensors.

  • Interferencia termo-electro-magnética en transistores nanométricos MOS con óxidos de compuerta ultra delgados/thermo-electro-magnetics interference mechanisms in nano-scaled MOSFETs.

  • Caracterización, modelado y simulación de dispositivos semiconductores a temperaturas criogénicas/Physics, characterization, and modeling of semiconductor devices at cryogenic temperatures.



  • IBM-INAOE Joint Study Agreement “Physics of carrier transport, trapping, detrapping in conventional and high-K metal gate devices in bulk and and SOI semiconductor technologies”, 2011-2015

  • Analysis and modelling of 30 GHz and above signalling in Silicon-package-PCB systems”, 2010-2011. CONACyT.

  • Intel Research Grant, “Addressing silicon innovation through characterization, modeling, analysis, and design of compact-space and energy-efficient chip-to-chip signaling, on-die RFI scanning, and self-calibrated on-die temperature solutions for computing platforms”, 2006-2008.


tesis/supervised theses:


Oscar Huerta G, “Caracterización y modelado de la degradación eléctrica de transistores MOS nanométricos bajo la influencia de campo magnético”, Septiembre 2014, en desarrollo/“Characterization and modelling of electrical degradation in nanometric MOSFETs under a magnetic field”, in process.


Adrián Tec Chim, “Análisis teórico de la magnetocundancia en dispositivos semiconductores de escala atómica”, Septiembre 2014, en proceso./“Theoretical analysis of magnetoconductance in atomic-scaled semiconductor devices”, in process.


Gabriela Alejandra Rodríguez Ruiz, “Tridimensional simulation of time-dependent electromagnetic effects in nano-scaled semiconductor devices”, February 20, 2015.


Victor Hugo Vega González, “Analysis of quantum electromagnetic effects in low dimensional MOSFEts”, June 2014.


Erika Póndigo de los Ángeles, “Characterization and modeling of the multidirectional gate current in nano-scales MOS tranaistors”, June 2014.


“Analysis and modeling of high-freqency substrate losses in CMOS integrated circuits”, by Emmanuel Torres R., in co-supervision with Reydezel Torres T. INAOE, Concluded December 15, 2008.


“Non-stationary effects of the space charge in semiconductor structures”, By Abel García Barrientos, INAOE, Concluded December 15, 2006.


“Development of a high-frequency MOSFET simulator based on macromodelling”, by Rodrigo Rodríguez-T., Co-supervised with Dr. Arturo Sarmiento-R.. Concluded in March 2002.


“Analysis, modeling, design and testing of a magnetic detector based on a SiGe alloy”, by Pedro J. Gárcia R.. Supervised by Dr. Edmundo Gutiérrez. Concluded in August 2000.


“Interaction of electromagnetic waves with silicon surface integrated pin structures”, by Margarita Tecpoyotl T.. Co-supervised with Dr. Svetlana Koshevaya. Concluded in December 1999.


"A CMOS-compatible micromachined microphone", by Federico Sandoval I.. This thesis was carried out under the collaboration agreement between INAOE and the Centro Nacional de Microelectrónica CNM, Barcelona, Spain. Concluded in May 22, 1998.


"Low-Temperature Modeling and Simulation of Semiconductor Devices", by Javier de la Hidalga W..Concluded in September 23 1998.


"Silicon based photodetectors", concluded in February 1997, by Alfonso Torres J.. This thesis was carried out under a collaboration agreement between INAOE and IMEC (Leuven, Belgium).


"High frequency characterization and modeling of submicron MOS devices", by Roberto Murphy A.. This thesis was carried out under a collaboration agreement between INAOE and IMEC (Leuven, Belgium). Concluded in July 1997.



"Development of a Process for Local Oxidation in Silicon", Ignacio Zaldivar H., May 1995. INAOE, Puebla, Mexico.


"A silicon based photo detector for 4.2 K operation", Margarita Tecpoyotl T., March 1997. INAOE, Puebla, Mexico. 


"Design and characterization of CMOS analog circuits for low temperature operation” (in spanish), Alejandro Mariscal Magaña, July 1997. INAOE, Puebla, Mexico. 


“Design, fabrication and characterization of a Field-Effect-Optical-Transistor”, Ma. de la luz García C., January 2001. INAOE, Puebla, Mexico.


Héctor Manuel Uribe Vargas, “Analysis and modeling of transmission, reflection, and resonance in 28nm MOS transistors”, September 27, 2013.


Oscar Vicente Huerta González, “Hole and electron contribution to the magneto-transport of nano-scaled MOS transistors”- February 19, 2014.


Publicaciones recientes/selected list of recent publications:


  • G. A. Rodríguez-R., E. A. Gutiérrez-D., L. A. Sarmiento-R., Z. Stanojevic, H. Kosina, F. Guarin, and P. García-R., “Experimental and simulation results of magnetic modulation of gate oxide tunneling current in nano-scaled MOS transistors”, IEEE Electron Device Letters, Vol. 36 , No. 4 , April, 2015, pp. 387-389, 

  • G. A. Rodríguez-R., E. A. Gutiérrez-D., L. A. Sarmiento-R., Z. Stanojevic, H. Kosina, F. Guarin, and P. García-R., “Thermo-magnetic effects in nano-scaled MOSFET: an experimental, modeling, and simulation approach”, IEEE Journal of the Electron Devices Society, Vol, 3, No. 2, 2015, pp. 78-84. DOI:10.1109/JEDS.2015.2390629.

  • Joel Molina, Rene Valderrama, Carlos Zuniga, Pedro Rosales, Wilfrido Calleja, Alfonso Torres, Javier De La Hidalga, Edmundo Gutierrez, “Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glasss at 300 oC”, Microelectronics Reliability Vol. 54, 21 July 2014, pp. 2747-2753.

  • Agustín L. Herrera-May, Jesús A. Tapia, Saúl M. Domínguez-Nicolás, Raúl Juarez-Aguirre, Edmundo A. Gutiérrez-D., Amira Flores, Eduard Figueras, Elias Manjarrez, “Improved detection of magnetic signals by a MEMs sensor using stochastic resonance”, PlosOne Open Journal, October 2014, Volume 9, Issue 10, e109534, pp. 1-8, doi:10.1371/journal.pone.0109534. 

  • J. Molina, J. De La Hidalga, and E. Gutierrez, “Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surface by using an external magnetic field”, Journal of Applied Physics, 116, 064510 (2014); doi:10.1063/1.4892891. 

  • J. Molina, C. Zuñiga, E. Mendoza, J. L. Sanchez-S., E. Gutierrez, and E. R. Bandala, “Using thin films of rutile-phase TiO2 nanoparticles as photoactive material in Metal-Semiconductor structures with low thermal processing”, Energy and Environment Focus journal, Vol. 2, 2014, pp. 1-8. ISSN: 2326-3040. 

  • J. Molina, J. L. Sanchez-S., C. Zuñiga, E. Mendoza, R. Cuahtecontzi, G. García-P., E. A. Gutiérrez, E. R. Bandala, “Low-temperature processing of thin films based on rutile TiO2 nanoparticles for UV photocatalysis and bacteria inactivation”, Journal of Materials Science, September 2013, on-line versión DOI 10.1007/s10853-013-7761-3. ISSN (Online): 1573-4803.

  • E. Torres-R., R. Torres-T., and E. A. Gutiérrez-D., “Identifying the diffusion and drift conduction regions in MOSFETs through S-Parameters”, accepted for publication in IEEE Trans. On Electron Devices, Vol. 60, No. 3, March 2013, pp. 1288-1291.

  • Saúl M. Domínguez, R. Juárez-Aguirre, A. L. Herrera-May, P. García-R., E. Figueras, E. Gutiérrez, J. A. Tapia, A. Trejo, E. Manjarrez, “Respiratory magnetogram detected with a MEMs device”, accepted for publication in Intl. Journal of Medical Sciences, Vol. 10, 2013, pp. 1445-1450.

  • E. A. Gutiérrez-D., E. Póndigo de los A., V. H. Vega-G., and F. Guarin, “Observation of asymmetric magnetoconductance in strained 28-nm Si MOSFETs”, IEEE Electron Device Letters, Vol. 33, No. 2, February 2012, pp. 254-256.




  • Edmundo A. Gutiérrez-Domínguez, M. J Deen, and C. Claeys, “Low TemperatureElectronics: Physics, Devices, Circuits, and Applications”, Academic Press, New York, 2001.

  • Edmundo A. Gutiérrez-D. (Editor and co-author), with 6 more co-authors, “Nano-Scaled Semiconductor Devices; Physics,Modeling and Characterization”. to be published by IET, England, April 2016.

Reconocimientos internacionales/International recognitions


  • Miembro senior de la IEEE desde 2008/IEEE senior member since 2008

  • Editor Asociado de la revista IEEE Electron Device Letters desde 2012/IEEE Electron Device Letters Associate Editor since 2012

  • Conferencista distinguido de la IEEE desde el 2011/IEEE Electron Devices Society Distinguished Lecturer since 2011

  • Investigador invitado en la Universidad Simon Fraser de Vancouver, Canada en 1996/Guest Professor at Simon Fraser University, Vancouver, Canada, 1996.

  • Investigador invitado en la Universidad de Sao Paulo, Brasil en 1996/Guest Professor at Sao Paulo University, Brazil, 1996.

  • Investigador invitado en la Universidad Técnica de Viena, Austria, 2002/Guest Professor at Technical University Vienna, Austria, 2002.



Última modificación :
20-01-2016 a las 09:22 por Laura Toxqui Olmos

Dirección: Luis Enrique Erro # 1, Tonantzintla, Puebla, México C.P. 72840 | Teléfono: (222) 247. 27.42 | Contacto: | Fax: 247.27.42


Esta obra está licenciada bajo una Licencia Creative Commons Atribución-No Comercial-Sin Obras Derivadas 2.5 México

Creative Commons License